TAILIEUCHUNG - Electronic Materials Part 10

Tham khảo tài liệu 'electronic materials part 10', kỹ thuật - công nghệ, cơ khí - chế tạo máy phục vụ nhu cầu học tập, nghiên cứu và làm việc hiệu quả | Mechanisms in Semiconducting Gas Sensor Interface - Gas adsorption 2e O2 g 2O s Induce space charge barrier modulate Grain boundary barrier 1. Surface conduction 2. Grain boundary barrier ------------------------------------- . Tuller-2001 4 Sensor Configuration A single 9 mm2 chip sensor array with four sensing elements with interdigitated structure electrodes heater temperature sensor . Tuller-2001 9 . Tuller-2001 Schematic Cross Section of Mounted Sensor . Tuller-2001 10 . Tuller-2001 10 5 Resistance Response to Gas Environment Schematic of Gas Sensor Structure Pt electrode Electrical easuremen SÌO2 layer Si wafer ZnO film 150 nm Electrode Pt 200 nm Ta 25 nm film Insulation layer SiO2 layer 1 pm Substrate Si wafer I----------------------------------1 M 9710746 20V S1219a 7r i l Ar i l -7- 3 -I Datum 2001 - ------S1219b ZnO 3 II Steuerdaei S1219c 1----------------------------------1 MeBprotokoll 273 ------S1219d 80 time I h 110 100 90 80 70 8 60 I 50 I 40 30 20 10 0 -10 0 20 40 60 ------MFC2 Temp NO2 NH3 ------Feuchte CO NO2kl H2 I Temp 360C H CO NH 10 50 and 100 ppm NO and 2 ppm 80 70 60 50 40 30 20 10 0 -10 110 100 90 Pfad alpha missy Messungen mẹsspatỉ_1 M. Jagle I . Tuller-2001 11 MicroElectroMechanical Systems - MEMS Bulk Micromachining Surface Micromachining Micromachining - Application of microfabrication tools . lithography thin film deposition etching dry wet bonding . Tuller-2001 12

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