TAILIEUCHUNG - Study on photoluminescence properties of porous gap material

This paper reports on the photoluminescence of porous GaP prepared by electrochemical anodization of (111)-oriented bulk material. Porous and bulk GaP exhibits green and red photoluminescences, respectively when excited by a 355-nm laser. The photoluminescence intensity of porous GaP is much stronger than that of the bulk sample. | VNU Journal of Science: Natural Sciences and Technology, Vol. 34, No. 1 (2018) 16-20 Study on Photoluminescence Properties of Porous GaP Material Pham Thi Thuy*, Bui Xuan Vuong 1 Sai Gon University, 273 An Duong Vuong, 5 Distrist, Ho Chi Minh City Received 06 April 2018 Revised 30 May 2018; Accepted 28 June 2018 Abstract: This paper reports on the photoluminescence of porous GaP prepared by electrochemical anodization of (111)-oriented bulk material. Porous and bulk GaP exhibits green and red photoluminescences, respectively when excited by a 355-nm laser. The photoluminescence intensity of porous GaP is much stronger than that of the bulk sample. Temperature-dependent time-resolved photoluminescence shows that the green emission gradually decreases when the temperature increases and the photoluminescence full width at haft maximum (FWHM) slightly narrows with decreasing temperature. These results are assigned to the contribution of lattice vibrations. Raman scattering measurement is carried out to confirm the size decrease of the porous GaP material. Keywords: PorousGaP, photoluminescence, time-resolved photoluminescence, electrochemical etching. 1. Introduction compared to bulk Si [2-3], porous silicon has attracted much attention of technologists recently for developing optical, photonic and electronic devices [4,5,10], sensors [6,7,8] and (bio) chemical reactors [9]. Similar to silicon, III-V semiconductor such as GaP has an indirect band gap ( at room temperature) and its band structure is similar to that of silicon. These make porous GaP a very promising photonic material for the visible spectral range. Porous GaP is of considerable interest for both fundamental research and technological application [11-21]. However, the temperature-dependent time-resolved photoluminescence study has not been much mentioned. The discovery in 1990 by Canham of the observation of visible room-temperature luminescence in etched silicon [1] has led to a renewed .

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