TAILIEUCHUNG - Models in Hardware Testing- P5

Models in Hardware Testing- P5:Model based testing is one of the most powerful techniques for testing hardware and software moving forward to nanoscaled CMOS circuits, we observe a plethora of new defect mechanisms, which require increasing efforts in systematic fault modeling and appropriate algorithms for test generation, fault simulation and diagnosis. | 110 B. Becker and I. Polian one defect resistance O-FC f is set to 100 . As in the case of P-FC to calculate G-FC E-FC and O-FC of a fault list the values for individual faults are averaged. It is obvious that P - FC E - FC G - FC O - FC holds. This means that E-FC and O-FC can be used as lower and upper bounds of the exact fault coverage G-FC for large circuits for which G-FC cannot be computed. The subsequent sections will provide more details on algorithms for resistive fault simulation and ATPG. Fault simulation computes fault coverages with respect to the definitions given above. The main part of a fault simulation procedure is to obtain C-ADI of a fault. ATPG attempts to find a test pattern for a specific defect or prove that this defect is redundant. If done consequently ATPG yields G-ADI as a by-product and allows the calculation of G-FC. Interval-Based Fault Simulation Interval-based fault simulation is the simplest algorithm to determine the resistive bridging fault RBF coverage of a test set. It is based on an electrical analysis and construction of analogue detection intervals ADIs at fault site and the propagation of the ADIs to the outputs of the circuit. C-ADI of a fault is obtained by aggregating the ADIs at different outputs for all test patterns in a test set. Fault coverage is then calculated as outlined in the previous section. Figure shows the pseudo code of the fault simulation procedure RBF_FSIM. It takes the circuit and the technology parameters needed for electrical analysis at the Procedure RBF_FSIM Input Circuit CKT technology parameters fault listF 2 test set T zh t2 Optional input G for all g F. Output C for all g F P-FC E-FC O-FC G-FC if G-ADIs provided 1 for each g F C fi 0 2 for each t g T begin 3 for each g F begin 4 perform good-simulation 5 determine critical resistances Ri Fm at fault site 6 construct local ADIs 0 F 7 propagate ADIs to circuit output 8 for each circuit output with ADI A 9 CK Cft uA 10 end for 11 end for .

TAILIEUCHUNG - Chia sẻ tài liệu không giới hạn
Địa chỉ : 444 Hoang Hoa Tham, Hanoi, Viet Nam
Website : tailieuchung.com
Email : tailieuchung20@gmail.com
Tailieuchung.com là thư viện tài liệu trực tuyến, nơi chia sẽ trao đổi hàng triệu tài liệu như luận văn đồ án, sách, giáo trình, đề thi.
Chúng tôi không chịu trách nhiệm liên quan đến các vấn đề bản quyền nội dung tài liệu được thành viên tự nguyện đăng tải lên, nếu phát hiện thấy tài liệu xấu hoặc tài liệu có bản quyền xin hãy email cho chúng tôi.
Đã phát hiện trình chặn quảng cáo AdBlock
Trang web này phụ thuộc vào doanh thu từ số lần hiển thị quảng cáo để tồn tại. Vui lòng tắt trình chặn quảng cáo của bạn hoặc tạm dừng tính năng chặn quảng cáo cho trang web này.