TAILIEUCHUNG - A direct evidence of fatigue damage growth inside silicon MEMS structures obtained with EBIC technique

This paper presents the results of a trial to observe the defect growth inside silicon MEMS structures under fatigue loading by applying EBIC technique. The tests were performed on two specimens fabricated from an n-type single crystal silicon wafer. While the test region of the specimens was repeatedly subjected to compressive stress, EBIC images were obtained to visualize damage evolution which presented by the growth of the dark region on EBIC images. | Volume 36 Number 2 2 2014 Vietnam Journal of Mechanics, VAST, Vol. 36, No. 2 (2014), pp. 109 – 118 A DIRECT EVIDENCE OF FATIGUE DAMAGE GROWTH INSIDE SILICON MEMS STRUCTURES OBTAINED WITH EBIC TECHNIQUE 1 Hanoi Vu Le Huy1,∗, Shoji Kamiya2 University of Science and Technology, Vietnam 2 Nagoya Institute of Technology, Japan ∗ E-mail: Received October 16, 2013 Abstract. Electron beam induced current (EBIC) is a semiconductor analysis technique performed in a scanning electron microscope (SEM) or scanning transmission electron microscope (STEM). It is able to sense defects beneath the surface even invisible by SEM. This paper presents the results of a trial to observe the defect growth inside silicon MEMS structures under fatigue loading by applying EBIC technique. The tests were performed on two specimens fabricated from an n-type single crystal silicon wafer. While the test region of the specimens was repeatedly subjected to compressive stress, EBIC images were obtained to visualize damage evolution which presented by the growth of the dark region on EBIC images. It was proved that the damage is not due to the growth of oxidation layer on the surface of the specimens but due to the growth of intrinsic defects of silicon crystal. The results would be evidences to elucidate that the fatigue damages grow inside silicon MEMS structures but not in oxidation layer. Keywords: EBIC, silicon, MEMS, defect, fatigue, dislocation. 1. INTRODUCTION Microelectromechanical systems (MEMS) are devices with highly miniaturized mechanical components fabricated using batch processing techniques inspired by integrated circuit (IC) technologies, which have been among the fastest growing technologies, opening new frontiers of microtechnology [1, 2]. They have already been applied to various fields such as medical treatment and aerospace equipment where the reliability of MEMS structures is of serious concern. The mechanical reliability of MEMS has recently .

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• Fatigue damage growth inside silicon MEMS structures obtained
• The growth of the dark region
• Electron beam induced current
• Visualize damage evolution
• Dang Dinh Ang
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