TAILIEUCHUNG - Temperature-dependent photoluminescence study of porous GaP

This paper reports on the temperature-dependent photoluminescence of porous GaP under the 355-nm excitation. Porous GaP was formed by electrochemical anodization of the (111)-oriented bulk material. Photoluminescence taken from the porous GaP at room temperature shows a narrow green emission band peaking at 550 nm ( eV) and a broad red emission one peaking at 770 nm ( eV). | Vietnam Journal of Science and Technology 57 3A 2019 41-47 doi 2525-2518 57 3A 14057 TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE STUDY OF POROUS GaP Pham Thi Thuy Department of Natural Sciences Education Sai Gon University 273 An Duong Vuong Road Ward 3 Distrist 5 Ho Chi Minh City Email phamthithuy@sgu. Received 30 July 2019 Accepted for publication 5 September 2019 Abstract. This paper reports on the temperature-dependent photoluminescence of porous GaP under the 355-nm excitation. Porous GaP was formed by electrochemical anodization of the 111 -oriented bulk material. Photoluminescence taken from the porous GaP at room temperature shows a narrow green emission band peaking at 550 nm eV and a broad red emission one peaking at 770 nm eV . In the temperature range from 25 K to 275 K intensity from the green emission gradually decreases with increasing temperature. Additionally the red-shift of the green luminescence band with increasing temperature exhibits the same that of the GaP band gap narrowing with temperature. This means a contribution of the phonons and the lattice dilatation with the increase of temperature. Keywords porous GaP temperature-dependent photoluminescence. Classification numbers . 1. INTRODUCTION Porous semiconductors are attracting research interest because of their interesting physical properties. Porous silicon was discovered in 1957 by Uhlin due to the observation of visible room-temperature luminescence 1 . This material plays an important role in many technologies such as optical and photonic devices 2 3 sensors 4-6 bio chemical reactors 7 and super capacitors 8 . Like silicon III-V semiconductor such as gallium phosphide has been investigated in the form of porous structure 9-13 . GaP can be made porous by anodic etching in 25 HF electrolyte of 111 -oriented bulk material. This material has an indirect band gap eV and its band structure is similar to that of silicon. These make porous GaP a very .

• Hoá học
• Porous GaP
• Temperature dependent photoluminescence
• Electrochemical anodization
• Green luminescence band
• GaP band gap narrowing
• VNU Journal of Science
• Study on photoluminescence properties of porous gap material
• Porous gap material
• The photoluminescence of porous GaP
• The bulk sample
• Bulk GaP exhibits green
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