TAILIEUCHUNG - MODERN ASPECTS OF BULK CRYSTAL AND THIN FILM PREPARATION_2

In modern research and development, materials manufacturing crystal growth is known as a way to solve a wide range of technological tasks in the fabrication of materials with preset properties. This book allows a reader to gain insight into selected aspects of the field, including growth of bulk inorganic crystals, preparation of thin films, low-dimensional structures, crystallization of proteins, and other organic compounds. | Part 2 Growth of Thin Films and Low-Dimensional Structures 12 Controlled Growth of C-Oriented AlN Thin Films Experimental Deposition and Characterization Manuel García-Méndez Centro de Investigation en Ciencias Físico-Matemáticas FCFM de la UANL Manuel L. Barragán S N Cd. Universitaria Mexico 1. Introduction Nowadays the science of thin films has experienced an important development and specialization. Basic research in this field involves a controlled film deposition followed by characterization at atomic level. Experimental and theoretical understanding of thin film processes have contributed to the development of relevant technological fields such as microelectronics catalysis and corrosion. The combination of materials properties has made it possible to process thin films for a variety of applications in the field of semiconductors. Inside that field the nitrides III-IV semiconductor family has gained a great deal of interest because of their promising applications in several technology-related issues such as photonics wear-resistant coatings thin-film resistors and other functional applications Moreira et al. 2011 Morkoc 2008 . Aluminium nitride AlN is an III-V compound. Its more stable crystalline structure is the hexagonal wurzite lattice see figure 1 . Hexagonal AlN has a high thermal conductivity 260 Wm-1K-1 a direct band gap Eg eV high hardness 2 x 103 kgf mm-2 high fusion temperature 2400 C and a high acoustic velocity. AlN thin films can be used as gate dielectric for ultra large integrated devices ULSI or in GHz-band surface acoustic wave devices due to its strong piezoelectricity Chaudhuri et al. 2007 Chiu et al. 2007 Jang et al. 2006 Kar et al. 2006 Olivares et al. 2007 Prinz et al. 2006 . The performance of the AlN films as dielectric or acoustical electronic material directly depends on their properties at microstructure grain size interface and surface morphology roughness . Thin films of AlN grown at a c-axis orientation preferential .

• Cơ khí - Chế tạo máy
• Crystal Growth
• Wafer Manufacturing
• CaF2 Crystals
• Oxides Crystal
• Pattern Selection
• Intermetallic Cerium
• Material MgSiO3
• Purification of Erythromycin
• Antisolvent Crystallization
• Azeotropic Evaporative
• Crystallization
• Growth Methods
• Journal of Chemistry
• Crystal morphology
• Growth units
• Magnesium carbonate hydrates
• Crystal transformation
• Temperature gradient method
• Single crystal growth
• Layer structure materials
• Fabricate bulk single crystals
• FE SEM measurement
• Radiation measurements
• Pulse shape discrimination
• Nondestructive inspection
• Hazardous materials
• báo cáo hóa học
• công trình nghiên cứu về hóa học
• tài liệu về hóa học
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• Scientific reports
• scientific research
• molecular Biology
• biochemical studies
• environmental medicine
• Crystal structure
• AlN film
• Crystal domain
• X ray diffraction
• Trench patterned template
• Model of anion coordination polyhedron growth units
• Magnesium hydroxide
• Growth morphology
• Raman spectroscopy
• Report medicine
• traditional medicine
• thesis report
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• intermediate cells
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• oxidation
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