TAILIEUCHUNG - The development of magnetic tunnel junction fabrication techniques

Information technology is another approach to transfer skills. Hiekata et al. (2005A, 2005B, 2006, 2007) developed knowledge transfer system, which can be applied effectively to acquire knowledge of elder experts. The characteristics of each job were revealed through questionnaire and structured interviews, and the job process is analysed and represented by workflow and related documents, where tacit knowledge of some tasks can be turned to explicitly documented knowledge. This system was applied to actual shipbuilding design process in Japanese several shipyards as a case study, and proved to be useful. Another approach to utilize information technology is the. | The development of magnetic tunnel junction fabrication techniques Clifford Alastair Elwell Darwin College Cambridge. A dissertation submitted for the degree of Doctor of Philosophy at the University of Cambridge July 2002 The development of magnetic tunnel junction fabrication techniques The discovery of large room temperature magnetoresistance MR in magnetic tunnel junctions in 1995 sparked great interest in these devices. Their potential applications include hard disk read head sensors and magnetic random access memory MRAM . However the fabrication of repeatable high quality magnetic tunnel junctions is still problematic. This thesis investigates methods to improve and quantify the quality of tunnel junction fabrication. Superconductor-insulator-superconductor SIS and superconductor-insulator-ferromagnet SIF tunnel junctions were used to develop the fabrication route due to the ease of identifying their faults. The effect on SIF device quality of interchanging the top and bottom electrodes was monitored. The relationship between the superconducting and normal state characteristics of SIS junctions was investigated. Criteria were formulated to identify devices in which tunneling is not the principal conduction mechanism in normal metal-insulator-normal metal junctions. Magnetic tunnel junctions MTJs were produced on the basis of the fabrication route developed with SIS and SIF devices. MTJs in which tunneling is the principal conduction mechanism do not necessarily demonstrate high MR due to effects such as magnetic coupling between the electrodes and spin scattering. Transmission electron microscope images were used to study magnetic tunnel junction structure revealing an amorphous barrier and crystalline electrodes. The decoration of pinholes and weak-links by copper electrodeposition was investigated. A new technique is presented to identify the number of copper deposits present in a thin insulating film. The effect of roughness aluminium thickness and .

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