TAILIEUCHUNG - Pore Characterization in Low-k Dielectric Films Using X-ray Reflectivity: X-ray Porosimetry

Increased miniaturization of the integrated chip has largely been responsible for the rapid advances in semiconductor device performance, driving the industry’s growth over the past decade(s). Soon the minimum feature size in a typical integrated circuit device will be well below 100 nm. At these dimensions, interlayers with extremely low dielectric constants (k) are imperative to reduce the cross-talk between adjacent lines and also enhance device speed. State-of-the-art non-porous, silicon-based low-k dielectric materials have k values on the order of | practice guide Pore Characterization CD in Low-k Dielectric o Films Using X-ray c Reflectivity X-ray Porosimetry Christopher L. Soles Hae-Jeong Lee Eric K. Lin and Wen-li Wu National Institute of Standards and Technology Technology Administration Special Publication 960-13 NIST Recommended Practice Guide Special Publication 960-13 Pore Characterization in Low-k Dielectric Films Using X-ray Reflectivity X-ray Porosimetry Christopher L. Soles Hae-Jeong Lee Eric K. Lin and Wen-li Wu NIST Polymers Division June 2004 . Department of Commerce Donald L. Evans Secretary Technology Administration Phillip J. Bond Undersecretary for Technology National Institute of Standards and Technology Arden L. Bement Jr. .

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