TAILIEUCHUNG - RECENT ADVANCES IN NANOFABRICATION TECHNIQUES AND APPLICATIONS_2

Tham khảo sách 'recent advances in nanofabrication techniques and applications_2', kỹ thuật - công nghệ, hoá học - dầu khí phục vụ nhu cầu học tập, nghiên cứu và làm việc hiệu quả | Part 4 EUV Lithography and Resolution Enhancement Techniques 18 Laser-Plasma Extreme Ultraviolet Source Incorporating a Cryogenic Xe Target Sho Amano University of Hyogo Laboratory of Advanced Science and Technology for Industry LASTI Japan 1. Introduction Optical lithography is a core technique used in the industrial mass production of semiconductor memory chips. To increase the memory size per chip shorter wavelength light is required for the light source. ArF excimer laser light 193 nm is used at present and extreme ultraviolet EUV light nm is proposed in next-generation optical lithography. There is currently worldwide research and development for lithography using EUV light Bakshi 2005 . EUV lithography EUVL was first demonstrated by Kinoshita et al. in 1984 at NTT Japan Kinoshita et al. 1989 . He joined our laboratory in 1995 and has since been actively developing EUVL technology using our synchrotron facility NewSUBARU. Today EUVL is one of the major themes studied at our laboratory. To use EUVL in industry however a small and strong light source instead of a synchrotron is required. Our group began developing laser-produced plasma LPP sources for EUVL in the mid-1990s Amano et al. 1997 . LPP radiation from high-density high-temperature plasma which is achieved by illuminating a target with high-peak-power laser irradiation constitutes an attractive high-brightness point source for producing radiation from EUV light to x-rays. Light at a wavelength of nm with 2 bandwidth is required for the EUV light source which is limited by the reflectivity of Mo Si mirrors in a projection lithography system. Xe and Sn are known well as plasma targets with strong emission around nm. Xe was mainly studied initially because of the debris problem in which debris emitted from plasma with EUV light damages mirrors near the plasma quickly degrading their reflectivity. This problem was of particular concern in the case of a metal target such as Sn because the .

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