TAILIEUCHUNG - Solar Cells Thin Film Technologies Part 14

Tham khảo tài liệu 'solar cells thin film technologies part 14', kỹ thuật - công nghệ, cơ khí - chế tạo máy phục vụ nhu cầu học tập, nghiên cứu và làm việc hiệu quả | Novel Deposition Technique for Fast Growth of Hydrogenated Microcrystalline Silicon Thin-Film for Thin-Film Silicon Solar Cells 379 p RF i MW n RF Substrate Distance mm 20 60 20 Substrate Temperature C 250 250 250 Power W 5 700 5 Pressure mTorr 200 120 200 H2 sccm 61 15 55 SiH2Cl2 sccm 3 3 3 PH3 sccm 15 B2H6 sccm 9 Table 3. Typical deposition conditions for p i and n layers ZnO Al front side ZnO Al back side Ag Substrate Position cm 6 6 6 Substrate Temperature C 350 250 250 RF Power W 100 100 50 Pressure Pa thickness A 2500 2500 1500 Table 4. Typical deposition condition for ZnO Al and Ag layers illustrates photocurrent -voltage characteristics for Si H Cl thin-film solar cells under 100 mW cm2 white light exposure. Fig. 28a shows the I-V characteristics for the cell using pc-Si H Cl films fabricated at 20 A s by the high-density microwave plasma CVD of SiH2Cl2. The 5-6 efficiencies have been achieved for the cells fabricated by the conventional rf plasma-CVD method. However the performance is still poor and the open circuit voltage Voc V short circuit density Jsc mA cm2 Fill Factor FF and the conversion efficiency was in the cell made by the high-density microwave plasma from SiH2Cl2 but solar cell performance is confirmed by the high-density microwave plasma from SiH2Cl2 for the first time. The diffusion of Boron and Chlorine happens easily in i-layer by the high-density microwave plasma. Moreover the etching reaction of p layer has occurred because of the hydrogen plasma. It is required to evaluate not only a single film but it is also necessary to evaluate the each interface . AZO p p i and i n in order to improve the solar cell performance. More over precise control of p i i n AZO p interface formation is needed for obtaining the further high performance. 5. Conclusion The highly photoconductive and crystallized pc-Si H Cl films with less volume fraction of void and defect density were synthesized using the .

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