TAILIEUCHUNG - Chất lượngDesign and analysis of 10 nm T-gate enhancement-mode MOS-HEMT for high power microwave applications nước biển ven bờ từ dữ liệu các trạm quan trắc môi trường phía nam Việt Nam (2013- 2017)

In this work, we propose a novel enhancement-mode GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) with a 10 nm T-gate length and a high-k TiO2 gate dielectric. The DC and RF characteristics of the proposed GaN MOS-HEMT structure are analyzed by using a TCAD Software. | Journal of Science Advanced Materials and Devices 4 2019 180e187 Contents lists available at ScienceDirect Journal of Science Advanced Materials and Devices journal homepage locate jsamd Original Article Design and analysis of 10 nm T-gate enhancement-mode MOS-HEMT for high power microwave applications Touati Zine-eddine a Hamaizia Zahra a Messai Zitouni b c a Laboratory of Semiconducting and Metallic Materials University of Mohamed Khider Biskra Algeria b Electronics Department Faculty of Sciences and Technology University of BBA Algeria c Laboratory of Optoelectronics and Components UFAS 19000 Algeria a r t i c l e i n f o a b s t r a c t Article history In this work we propose a novel enhancement-mode GaN metal-oxide-semiconductor high electron Received 17 December 2018 mobility transistor MOS-HEMT with a 10 nm T-gate length and a high-k TiO2 gate dielectric. The DC and Received in revised form RF characteristics of the proposed GaN MOS-HEMT structure are analyzed by using a TCAD Software. The 30 December 2018 device features are heavily doped nþþ GaN source drain regions for reducing the contact resistances Accepted 2 January 2019 Available online 7 January 2019 and gate capacitances which uplift the microwave characteristics of the MOS-HEMT. The enhancement- mode GaN MOS-HEMTs showed an outstanding performance with a threshold voltage of V maximum extrinsic transconductance of 1438 mS mm saturation current at VGS 2 V of A mm Keywords Enhancement-mode maximum current of A mm unity-gain cut-off frequency of 524 GHz and with a record maximum MOS-HEMT oscillation frequency of 758 GHz. The power performance characterized at 10 GHz to give an output High-k power of dBm a power gain of dB and a power-added efficiency of . Undoubtedly these TiO2 results place the device at the forefront for high power and millimeter wave applications. Regrown source drain 2019 The Authors. Publishing services by Elsevier . on behalf of

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