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Chất lượngDesign and analysis of 10 nm T-gate enhancement-mode MOS-HEMT for high power microwave applications nước biển ven bờ từ dữ liệu các trạm quan trắc môi trường phía nam Việt Nam (2013- 2017)

In this work, we propose a novel enhancement-mode GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) with a 10 nm T-gate length and a high-k TiO2 gate dielectric. The DC and RF characteristics of the proposed GaN MOS-HEMT structure are analyzed by using a TCAD Software. | Journal of Science Advanced Materials and Devices 4 2019 180e187 Contents lists available at ScienceDirect Journal of Science Advanced Materials and Devices journal homepage www.elsevier.com locate jsamd Original Article Design and analysis of 10 nm T-gate enhancement-mode MOS-HEMT for high power microwave applications Touati Zine-eddine a Hamaizia Zahra a Messai Zitouni b c a Laboratory of Semiconducting and Metallic Materials University of Mohamed Khider Biskra Algeria b Electronics Department Faculty of Sciences and Technology University of BBA Algeria c Laboratory of Optoelectronics and Components UFAS 19000 Algeria a r t i c l e i n f o a b s t r a c t Article history In this work we propose a novel enhancement-mode GaN metal-oxide-semiconductor high electron Received 17 December 2018 mobility transistor MOS-HEMT with a 10 nm T-gate length and a high-k TiO2 gate dielectric. The DC and Received in revised form RF characteristics of the proposed GaN MOS-HEMT structure are analyzed by using a TCAD Software. The 30 December 2018 device features are heavily doped nþþ GaN source drain regions for reducing the contact resistances Accepted 2 January 2019 Available online 7 January 2019 and gate capacitances which uplift the microwave characteristics of the MOS-HEMT. The enhancement- mode GaN MOS-HEMTs showed an outstanding performance with a threshold voltage of 1.07 V maximum extrinsic transconductance of 1438 mS mm saturation current at VGS 2 V of 1.5 A mm Keywords Enhancement-mode maximum current of 2.55 A mm unity-gain cut-off frequency of 524 GHz and with a record maximum MOS-HEMT oscillation frequency of 758 GHz. The power performance characterized at 10 GHz to give an output High-k power of 29.6 dBm a power gain of 24.2 dB and a power-added efficiency of 43.1 . Undoubtedly these TiO2 results place the device at the forefront for high power and millimeter wave applications. Regrown source drain 2019 The Authors. Publishing services by Elsevier B.V. on behalf of