TAILIEUCHUNG - NANOSCALE TRANSISTORS Device Physics, Modeling and Simulation

Silicon technology continues to progress, but device scaling is rapidly taking the metal oxide semiconductor field-effect transistor (MOSFET) to its limit. When MOS technology was developed in the 1960's, channel lengths were about 10 micrometers, but researchers are now building transistors with channel lengths of less than 10 nanometers. New kinds of transistors and other devices are also being explored. Nanoscale MOSFET engineering continues, however, to be dominated by concepts and approaches originally developed to treat microscale devices. | NANOSCALE TRANSISTORS Device Physics Modeling and Simulation NANOSCALE TRANSISTORS Device Physics Modeling and Simulation Mark s. Lundstrom Purdue University West Lafayette Indiana USA Jing Guo University of Florida Gainesville Florida USA 4 Springer Mark s. Lundstrom Purdue University West Lafayette IN USA Jing Guo University of Florida Gainesville FL USA Nanoscale Transistors Device Physics Modeling and Simulation Library of Congress Control Number 2005933746 ISBN 10 0-387-28002-2 ISBN 13 978-0-387 28002-8 ISBN 10 0-387-28003-3 e-book Printed on acid-free paper. 2006 Springer Science Business Media Inc. All rights reserved. This work may not be translated or copied in whole or in part without the written permission of the publisher Springer Science Business Media Inc. 233 Spring Street New York NY 10013 USA except for brief excerpts in connection with reviews or scholarly analysis. Use in connection with any form of information storage and retrieval electronic adaptation computer software or by similar or dissimilar methodology now known or hereafter developed is forbidden. The use in this publication of trade names trademarks service marks and similar terms even if they are not identified as such is not to be taken as an expression of opinion as to whether or not they are subject to proprietary rights. Printed in the United States of America. 987654321 SPIN 11051794 .

• Vật lý
• Ballistic transport
• Nanotransistors
• Physical
• nanoscale MOSFETs
• scattering model
• Nanowire Field Effect Transistors