TAILIEUCHUNG - Báo cáo " Research on optimal silicon etching condition in TMAH solution and application for MEMS structure fabrication "

The research of optimal condition for etching silicon in TMAH solution with controlled etch rate and low surface roughness is the purpose of this study. The investigation on the influence of temperature, agitation, size of etch-window, etch time on etch rate and the surface roughness were carried out. With the TMAH concentration of 20% in weight, the optimal etching conditions were as follows: temperature of about 80 – 90 oC, agitation of 150 - 200 rpm. The etch rate is controlled in range of – µm/min. . | VNU Journal of Science Mathematics - Physics 25 2009 161-167 Research on optimal silicon etching condition in TMAH solution and application for MEMS structure fabrication Dinh Van Dung Hanoi Pedagogical University Hanoi Vietnam Received 15 May 2009 Abstract. The research of optimal condition for etching silicon in TMAH solution with controlled etch rate and low surface roughness is the purpose of this study. The investigation on the influence of temperature agitation size of etch-window etch time on etch rate and the surface roughness were carried out. With the TMAH concentration of 20 in weight the optimal etching conditions were as follows temperature of about 80 - 90 oC agitation of 150 - 200 rpm. The etch rate is controlled in range of - um min. The etched surface roughness was lower than 70 nm. Development of TMAH application a useful procedure for fabricating MEMS structures piezoresistive accelerometer was suggested. Keywords MEMS technology TMAH silicon etching accelerometer MEMS fabrication. 1. Introduction Anisotropic etching of silicon is a key technology for fabricating various 3-dimensional structures for Micro Electro Mechanical Systems MEMS . Although deep reactive ion etching Deep RIE has become popular for realizing high aspect ratio silicon microstructures the advantages of silicon anisotropic etching technology such as low process cost better surface smoothness and lower environmental pollution makes them as a complementally technology. The most popular chemical etchants are Potassium Hydroxide KOH and Tetra Methyl Ammonium Hydroxide CH3 4NOH TMAH . KOH was proposed for application very early. The salient good points of this etchant are its possibility of making structures with high aspect ratio because of the strong anisotropy in etch rate. However the drawback of KOH is its incompatibility with the IC technology 1 . To overcome the disadvantages of KOH Tetra Methyl Ammonium Hydroxide TMAH was later introduced as a fruitful .

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