TAILIEUCHUNG - The ettingshausen effect in doped semiconductor superlattice under the influence of confined optical phonon

The electron – optical phonon scattering is considered in detail to studying the Ettingshausen effect in doped semiconductor superlattice under the influence of phonon confinement and laser radiation. The analytical expressions for tensors and the Ettingshausen coefficient are obtained by using the kinetic equation method. | VNU Journal of Science Mathematics Physics Vol. 36 No. 3 2020 39-46 Original Article The Ettingshausen Effect in Doped Semiconductor Superlattice under the Influence of Confined Optical Phonon Cao Thi Vi Ba Nguyen Thi Lam Quynh Nguyen Quang Bau VNU University of Science 334 Nguyen Trai Thanh Xuan Hanoi Vietnam Received 18 December 2019 Revised 30 March 2020 Accepted 15 April 2020 Abstract. The electron optical phonon scattering is considered in detail to studying the Ettingshausen effect in doped semiconductor superlattice under the influence of phonon confinement and laser radiation. The analytical expressions for tensors and the Ettingshausen coefficient are obtained by using the kinetic equation method. The Ettingshausen coefficient depends on temperature of the sample amplitude and frequency of laser radiation magnetic field and the quantum number m specific for the confinement of phonon. The dependences are clearly displayed in the numerical results for GaAs Be GaAs Si doped semiconductor superlattice. The magnetic field makes the Ettingshausen coefficient change in quantitative under the influence of temperature or laser amplitude and change the resonance condition. The numerical results show that both resonance condition and resonance peaks position are affected by the increase of quantum number m. We also get the result corresponding to the unconfined optical phonon case when m is set to zero. Due to the change of the wave function and energy spectrum of electrons most of results for the Ettingshausen effect in doped semiconductor superlattice obtained are different from the case of bulk semiconductor. Moreover in comparison with the case of unconfined optical phonon under the influence of phonon confinement effect the Ettingshausen coefficient changes in magnitude the number and position of resonance peaks. Keywords Doped semiconductor superlattice Ettingshausen effect Quantum kinetic equation confined optical phonons. 1. Introduction It s well known that

• Toán học
• Doped semiconductor superlattice
• Ettingshausen effect
• Quantum kinetic equation
• Confined optical phonons
• The ettingshausen effect
• Acoustic phonon
• Optical phonon
• Semiconductor superlattice
• Threshold amplitude
• Communications in Physics
• Hall effect in the doped semiconductor superlattice
• In plane magnetic field under influence
• Intense electromagnetic wave
• Electron phonon interaction
• Tạp chí khoa học
• Khoa học tự nhiên
• Electron phonon interaction
• Quantum well
• Electromagnetic wave
• Compositional semiconductor superlattice
• AlGaAs compositional
• Quantum wire
• Electron optical phonons cattering
• Magneto thermoelectric effects