TAILIEUCHUNG - Characterization of high-power DFB mopa-diode lasers emitting at 1064 nm
Electro-Optical spectral characteristics and beam quality of the high power monolithic DFB-MOPA lasers emitting at 1064 nm have been investigated at the room temperature as function of injection current. Laser beam quality is characterized by waist diameter and far-field divergence angle versus average optical output power Beam propagation ratio M2 is defined at difference intensity levels from lateral beam profile giving more detail laser behaviors at high power. | Communications in Physics, Vol. 29, No. 1 (2019), pp. 47-54 DOI: CHARACTERIZATION OF HIGH-POWER DFB-MOPA DIODE LASERS EMITTING AT 1064 nm THANH-PHUONG NGUYEN † School of Engineering Physics, Hanoi University of Science and Technology, No. 1 Dai Co Viet, Hai Ba Trung, Hanoi, Vietnam † E-mail: Received 23 October 2018 Accepted for publication 29 December 2018 Published 31 January 2019 Abstract. Electro-Optical spectral characteristics and beam quality of the high power monolithic DFB-MOPA lasers emitting at 1064 nm have been investigated at the room temperature as function of injection current. Laser beam quality is characterized by waist diameter and far-field divergence angle versus average optical output power Beam propagation ratio M 2 is defined at difference intensity levels from lateral beam profile giving more detail laser behaviors at high power. Keywords: high power semiconductor lasers, DFB-MOPA, beam quality. Classification numbers: ; ; . I. INTRODUCTION High-power pulsed lasers emitting at 1064 nm have been requested for many applications such as health-care [1], material processing [2], free-space measurement, environmental research [3–6]. Especially, in the remote sensing technique for detection of important components of the atmosphere or distance measurements in LIght Detection And Ranging (LIDAR), the 1064 nm laser sources play an important role because of their short pulse duration and high power delivery. Solid state lasers based on Nd3+ doped crystals are good candidate for such applications [3]. However, in the aspect of compactness, many applications need small size and non-complex laser systems. Therefore, diode lasers and, in particular, DFB-MOPA diode lasers which have been developed recently [5, 7] seem to be suitable substitution. In these reports, DFB-MOPA diode laser characteristics were demonstrated to nearly satisfy the demands for an expected .
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