TAILIEUCHUNG - Pulsed electron deposition (PED) – A novel tool for growth of thin films
By using the PED technique the transparent coducting ZnO and Cu(InGa)Se2films were prepared. The effect of some deposition conditions on the properties of film has been examined and discussed. For Cu(InGa)Se2, the best film was obtained at the discharge voltage of 12 kV and substrate temperature of 400˚C, while for ZnO, the best film was grown at the oxygen pressure of Pa and at 400˚C. | Communications in Physics, Vol. 22, No. 1 (2012), pp. 65-73 PULSED ELECTRON DEPOSITION (PED) – A NOVEL TOOL FOR GROWTH OF THIN FILMS NGO DINH SANG National University of Civil Engineering PHAM HONG QUANG AND DO QUANG NGOC Hanoi University of Science, Vietnam National University Abstract. Pulsed Electron Deposition (PED) is a novel technique that can be applied for growing high quality thin films. In this technique, we used an electron beam with a focused diameter of about 1 mm, the energy up to 15 kV, the frequency of 1-10 Hz, the pulse width of 100 ns and the total current of kA generated in a discharge system. A remarkable advantage of this technique is the low deviation in composition from bulk to film. By using the PED technique the transparent coducting ZnO and Cu(InGa)Se2 films were prepared. The effect of some deposition conditions on the properties of film has been examined and discussed. For Cu(InGa)Se2 , the best film was obtained at the discharge voltage of 12 kV and substrate temperature of 400˚C, while for ZnO, the best film was grown at the oxygen pressure of Pa and at 400˚C. I. INTRODUCTION Recently, Pulsed Electron Deposition (PED) has been attracting a great attention in thin film deposition [1-3]. This technique, also known as Channel-Spark Discharge and Pulsed Plasma Deposition, is based on a pulsed high power electron beam created in a low pressure gas discharge. The electron beams are characterized by short pulse widths (∼100 ns), high energy density (∼10 J/cm2 ), and are delivered to a target surface by relatively low-energy electrons (∼10–20 keV), penetrating ∼1 mm into a target material, leading to a non-equilibrium heating that preserves the stoichiometric material transfer from the target to the substrate. PED shares some of the same advantages that characterize the well know technique, Pulsed Laser Deposition (PLD) such as easy control of film thickness, easy set-up, multicomponent film stoichiometry nearly identical to target
đang nạp các trang xem trước
