TAILIEUCHUNG - Lecture Electrical Engineering: Lecture 29 - Dr. Nasim Zafar

Lecture 29 - Current -voltage characteristics. The main contents of the chapter consist of the following: Qualitative theory of operation, quantitative ID-versus-VDS characteristics, large-signal equivalent circuits. | Dr. Nasim Zafar Electronics 1 - EEE 231 Fall Semester – 2012 COMSATS Institute of Information Technology Virtual campus Islamabad Current -Voltage Characteristics I-V Characteristics Lecture No. 29 Contents: Qualitative theory of operation Quantitative ID-versus-VDS characteristics Large-signal equivalent circuits. 2 Lecture No. 29 Current-Voltage Characteristics Reference: Microelectronic Circuits Adel S. Sedra and Kenneth C. Smith. 3 Nasim Zafar. Circuit Symbol (NMOS) Enhancement-Type: G D S B ID= IS IS IG= 0 G-Gate D-Drain S-Source B-Substrate or Body 4 Circuit Symbol (NMOS) Enhancement-Type The spacing between the two vertical lines that represent the gate and the channel, indicates the fact the gate electrode is insulated from the body of the device. The drain is always positive relative to the source in an n-channel FET. 5 Qualitative Theory of Operation Modes of MOSFET Operation 6 Modes of MOSFET Operation MOSFET can be categorized into three modes of operation, depending on VGS: VGS Vt and VDS Vt and VDS > VGS − Vt: The Saturation Mode 7 Nasim Zafar. MOSFET-Structure Enhancement Type-NMOSFET p n+ n+ metal L W Source S Gate: metal or heavily doped poly-Si G Drain D Body B oxide IG=0 ID=IS IS x y (bulk or substrate) 8 VGS VT The Linear Mode of Operation: n+-n-n+ structure inversion p n+ n+ n++ L W source S gate G drain D body B oxide + - +++ +++ +++ - - - - - VD=Vs 11 VGS > VT Quantitative ID-versus-VDS Relationships 12 13 Quantitative ID-VDS Relationships QN = inversion layer charge G (VG) S D (VDS) For VG VT, Qn(y) = QG = Cox (VG V VT) (Slide12) Quantitative ID-VDS .

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