TAILIEUCHUNG - Influence of Confined Optical Phonons and Laser Radiation on the Radioelectric Effect in a Cylindrical Semiconductor Quantum Wire with Parabolic Potential
Based on the quantum kinetic equation method, the influence of confined optical phonons and laser radiation on the Radioelectric effect in a cylindrical semiconductor quantum wire with parabolic potential subjected to a dc electric field and a linearly polarized electromagnetic wave has been theoretically studied. | VNU Journal of Science: Mathematics – Physics, Vol. 33, No. 3 (2017) 1-6 Influence of Confined Optical Phonons and Laser Radiation on the Radioelectric Effect in a Cylindrical Semiconductor Quantum Wire with Parabolic Potential Nguyen Quang Bau*, Cao Thi Vi Ba, Do Tuan Long Faculty of Physics, VNU University of Science, 334 Nguyen Trai, Hanoi, Vietnam Received 07 August 2017 Revised 30 August 2017; Accepted 19 September 2017 Abstract: Based on the quantum kinetic equation method, the influence of confined optical phonons and laser radiation on the Radioelectric effect in a cylindrical semiconductor quantum wire with parabolic potential subjected to a dc electric field and a linearly polarized electromagnetic wave has been theoretically studied. The obtained analytical expression of the Radioelectric field (REF) depends on frequencies and amplitudes of the external electromagnetic waves, the quantum wire parameters, the temperature of the system, and especially the quantum numbers (n and m) which characterize the phonon confinement. Numerical calculations for the GaAs/GaAsAl quantum wire show the strongly impact of the confined optical phonons as well as the laser radiation on the REF magnitude and posture. The REF also has more resonance peaks in comparison with that in case of bulk phonon. Keywords: Confined optical phonon, laser radiation, Radioelectric field, Cylindrical quantum wire, quantum kinetic equation. 1. Introduction The Radioelectric effect in semiconductor systems has attracted many interests in recent years. It is known that with the propagation electromagnetic wave (EMW), free carriers absorb both energy and EMW momentum, thereby electrons are generated with directed motion, and in this direction a Radioelectric field (REF) arises under opened circuit conditions [1, 2]. The longitudinal and the transverse REF has been theoretically calculated in the bulk semiconductor [1] and in the superlattices [3], the Radioelectric current has been shown to
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