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Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Hf-based high-k materials for Si nanocrystal floating gate memories | Khomenkova et al. Nanoscale Research Letters 2011 6 172 http www.nanoscalereslett.eom content 6 1 172 o Nanoscale Research Letters a SpringerOpen Journal NANO EXPRESS Open Access Hf-based high-k materials for Si nanocrystal floating gate memories Larysa Khomenkova1 Bhabani S Sahu2 Abdelilah Slaoui2 Fabrice Gourbilleau1 Abstract Pure and Si-rich HfO2 layers fabricated by radio frequency sputtering were utilized as alternative tunnel oxide layers for high-k Si-nanocrystals-SiO2 SiO2 memory structures. The effect of Si incorporation on the properties of Hf-based tunnel layer was investigated. The Si-rich SiO2 active layers were used as charge storage layers and their properties were studied versus deposition conditions and annealing treatment. The capacitance-voltage measurements were performed to study the charge trapping characteristics of these structures. It was shown that with specific deposition conditions and annealing treatment a large memory window of about 6.8 V is achievable at a sweeping voltage of 6 V indicating the utility of these stack structures for low-operating-voltage nonvolatile memory devices. Introduction In recent years nanocrystal-based memory devices have attracted considerable attention as a possible solution to overcome the scaling issue of electronic nonvolatile memories NVMs http public.itrs.net . By using discrete nanocrystals instead of the conventional continuous floating gate as charge storage nodes local-defect-related leakage can be reduced efficiently to improve data retention 1 . In this regard discrete-trap type semiconductor storage materials such as Si and Ge nanocrystals Si- and Ge-ncs embedded in a dielectric matrix have been demonstrated as potential candidates for the fabrication of high-speed high-density low-power-consuming and nonvolatile memories 2-6 . Several approaches have been reported for nanocrystal formation in a dielectric matrix such as chemical vapor deposition molecular beam epitaxy or sputtering. The main .
