Đang chuẩn bị nút TẢI XUỐNG, xin hãy chờ
Tải xuống
Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Nanoelectrodes for Molecular Devices: A Controllable Fabrication | Nanoscale Res Lett 2008 3 268-270 DOI 10.1007 S11671-008-9146-0 NANO SPOTLIGHTS Nanoelectrodes for Molecular Devices A Controllable Fabrication Published online 22 July 2008 to the author 2008 The miniaturization of components for the construction of useful devices is an essential feature of modern technology. Their miniaturization permits the assembly of ultra-densely integrated circuits and faster processors. However along with the developing of silicon-based electronics it is becoming apparent that intrinsic limitations will prevent their miniaturization down to the nanoscale. To solve these problems an alternative and promising strategy called the bottom-up approach was suggested by an eminent physicist and visionary Richard Feynman in 1959. In the bottom-up approach one can build nanodevices starting from atom or molecules. Via this strategy a series of significant advances have been achieved in recent years. However many problems still exist hampering its further development. This said the researchers were faced with a puzzling problem How can nanoelectrodes with a controllable gap size be fabricated This is particularly important because the fundamental basis of molecular electronics requires the electrodes to be fabricated with a gap size commensurate to the size of molecules of interest. Despite reports on successful attempts such as break junction electrochemical method and nanowire lithography the precise control of the gap size still need be resolved. For instance it is a problem to provide a real time characterization during the fabrication of the nanoelectrodes thus the exact gap size is usually undetectable leaving the precise control of the gap size unfeasible and inefficient. Moreover the existing methods often are far routine low yielding and difficult to implement. To solve these problems Chinese scientists have demonstrated a new method based on the electron-beam-induced deposition EBID process to realize a real time and in situ characterization