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Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Magnetoresistance in Sn-Doped In2O3 Nanowires | Nanoscale Res Lett 2009 4 921-925 DOI 10.1007 s11671-009-9336-4 NANO EXPRESS Magnetoresistance in Sn-Doped In2O3 Nanowires Olivia M. Berengue Alexandre J. C. Lanfredi Livia P. Pozzi Jose F. Q. Rey Edson R. Leite Adenilson J. Chiquito Received 12 February 2009 Accepted 24 April 2009 Published online 4 July 2009 to the authors 2009 Abstract In this work we present transport measurements of individual Sn-doped In2O3 nanowires as a function of temperature and magnetic field. The results showed a localized character of the resistivity at low temperatures as evidenced by the presence of a negative temperature coefficient resistance in temperatures lower than 77 K. The weak localization was pointed as the mechanism responsible by the negative temperature coefficient of the resistance at low temperatures. Keywords Oxide nanowires Weak localization Electron transport Electron-electron scattering Introduction Quasi 1D metal oxide nanostructures have attracted considerable interest in the last years for fundamental studies O. M. Berengue El L. P. Pozzi A. J. Chiquito Departamento de Fisica Universidade Federal de Sao Carlos CEP 13565-905 CP 676 Sao Carlos Sao Paulo Brazil e-mail oliberengue@yahoo.com.br A. J. C. Lanfredi J. F. Q. Rey Centro de Engenharia Modelagem e Ciencias Sociais Aplicadas Universidade Federal do ABC CEP 09210-170 Santo Andre Sao Paulo Brazil E. R. Leite Laboratorio Interdisciplinar de Eletroquimica e Ceramicas Departamento de Quimica Universidade Federal de Sao Carlos CEP 13565-905 CP 676 Sao Carlos Sao Paulo Brazil and also for potential applications. In particular they present properties which range from metals to semiconductors and insulators 1 the performance of these devices is strongly correlated to their structural and electronic properties. These low-dimensional structures have been used as building blocks in different devices and nanodevices 2 and they are important for both fundamental research and applications because they have the potential to
