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Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Memory properties and charge effect study in Si nanocrystals by scanning capacitance microscopy and spectroscopy | Lin et al. Nanoscale Research Letters 2011 6 163 http www.nanoscalereslett.eom content 6 1 163 o Nanoscale Research Letters a SpringerOpen Journal NANO EXPRESS Open Access Memory properties and charge effect study in Si nanocrystals by scanning capacitance microscopy and spectroscopy Zhen Lin1 Georges Bremond1 Franck Bassani2 Abstract In this letter isolated Si nanocrystal has been formed by dewetting process with a thin silicon dioxide layer on top. Scanning capacitance microscopy and spectroscopy were used to study the memory properties and charge effect in the Si nanocrystal in ambient temperature. The retention time of trapped charges injected by different direct current DC bias were evaluated and compared. By ramp process strong hysteresis window was observed. The DC spectra curve shift direction and distance was observed differently for quantitative measurements. Holes or electrons can be separately injected into these Si-ncs and the capacitance changes caused by these trapped charges can be easily detected by scanning capacitance microscopy spectroscopy at the nanometer scale. This study is very useful for nanocrystal charge trap memory application. Recently the self-assembled silicon nanocrystals Si-ncs that are formed within ultrathin SiO2 layer are considered to be a promising replacement of this conventional floating gate 1 2 . These isolated Si-ncs embedded in between a tunnel and a top dielectric layer serve as the charge storage nodes and exhibit many physical properties even at room temperature such as Coulomb blockade 3 single-electron transfer 4 and quantization charges effect 5 which differ from bulk crystals. It can reduce the problem of charge loss encountered in conventional memories cause thinner injection oxides and hence smaller operating voltages better endurance and faster write erase speeds. So the characterisation and understanding of its charging mechanism in such nanostructure is of prime importance. Although the conventional I-V and .
