Đang chuẩn bị nút TẢI XUỐNG, xin hãy chờ
Tải xuống
Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Surface Morphological and Nanomechanical Properties of PLD-Derived ZnO Thin Films | Nanoscale Res Lett 2008 3 186-193 DOI 10.1007 S11671-008-9134-4 NANO EXPRESS Surface Morphological and Nanomechanical Properties of PLD-Derived ZnO Thin Films Sheng-Rui Jian I-Ju Teng Ping-Feng Yang Yi-Shao Lai Jian-Ming Lu Jee-Gong Chang Shin-Pon Ju Received 11 December 2007 Accepted 7 May 2008 Published online 21 May 2008 to the authors 2008 Abstract This study reports the surface roughness and nanomechanical characteristics of ZnO thin films deposited on the various substrates obtained by means of atomic force microscopy AFM nanoindentation and nanoscratch techniques. ZnO thin films are deposited on a- and c-axis sapphires and 0001 6H-SiC substrates by using the pulsed-laser depositions PLD system. Continuous stiffness measurements CSM technique is used in the nanoindentation tests to determine the hardness and Young s modulus of ZnO thin films. The importance of the ratio H Efilm of elastic to plastic deformation during nanoindentation of ZnO thin films on their behaviors in contact-induced damage during fabrication of ZnO-based devices is considered. In addition the friction coefficient of ZnO thin films is also presented here. S.-R. Jian H Department of Materials Science and Engineering I-Shou University Kaohsiung 840 Taiwan ROC e-mail srjian@gmail.com I. -J. Teng Department of Materials Science and Engineering National Chiao Tung University Hsinchu 300 Taiwan ROC P.-F. Yang Y.-S. Lai Central Labs Advanced Semiconductor Engineering Kaohsiung 811 Taiwan ROC J. -M. Lu J.-G. Chang National Center for High-Performance Computing National Applied Research Laboratories No. 28 Nanke 3rd Rd. Sinshih Township Tainan County 74147 Taiwan ROC S.-P. Ju Department of Mechanical and Electro-Mechanical Engineering Center for Nanoscience and Nanotechnology National Sun-Yat-Sen University Kaohsiung 804 Taiwan ROC Keywords ZnO PLD AFM Nanoindentation Nanoscratch Hardness Introduction ZnO semiconductor having a wide direct band gap of 3.37 eV at room temperature has attracted .
