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Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Fabrication of a Highly Sensitive Chemical Sensor Based on ZnO Nanorod Arrays | Nanoscale Res Lett 2010 5 353-359 DOI 10.1007 S11671-009-9487-3 NANO EXPRESS Fabrication of a Highly Sensitive Chemical Sensor Based on ZnO Nanorod Arrays Jae Young Park Sun-Woo Choi Sang Sub Kim Received 24 June 2009 Accepted 29 October 2009 Published online 18 November 2009 to the authors 2009 Abstract We report a novel method for fabricating a highly sensitive chemical sensor based on a ZnO nanorod array that is epitaxially grown on a Pt-coated Si substrate with a top-top electrode configuration. To practically test the device its O2 and NO2 sensing properties were investigated. The gas sensing properties of this type of device suggest that the approach is promising for the fabrication of sensitive and reliable nanorod chemical sensors. Keywords ZnO nanorod array Chemical sensor mOcvd Recently nanostructures such as nanorods and nanowires made of semiconducting materials have been extensively investigated for the purpose of using their unique properties in various nanoscale functional devices 1 2 . For instance ZnO nanostructures have received particular attention due to their many valuable properties and the ease with which ZnO can be made into various nanostructure shapes by many different methods 3-6 . Since nanorods and nanowires have much larger sur-face-to-volume ratios compared to their thin film and bulk material counterparts their application to miniaturized highly sensitive chemical sensors has been predicted to be promising 7 8 . The electrical and chemical sensing properties of single ZnO nanorods have been extensively investigated in recent years by the fabrication and testing of single nanorod field-effect transistors FETs . According to J. Y. Park S.-W. Choi S. S. Kim H School of Materials Science and Engineering Inha University Incheon 402-751 Korea e-mail sangsub@inha.ac.kr the results ZnO nanorods show an n-type semiconducting behavior and their electrical transport is strongly dependent on the adsorption and or desorption nature of chemical .
