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Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Lattice parameter accommodation between GaAs(111) nanowires and Si (111) substrate after growth via Au-assisted molecular beam epitaxy | Nanoscale Research Letters SpringerOpen0 This Provisional PDF corresponds to the article as it appeared upon acceptance. Fully formatted PDF and full text HTML versions will be made available soon. Lattice parameter accommodation between GaAs 111 nanowires and Si 111 substrate after growth via Au-assisted molecular beam epitaxy Nanoscale Research Letters 2012 7 109 doi 10.1186 1556-276X-7-109 Anton Davydok davydok@physik.uni-siegen.de Steffen Breuer steffen.breuer@anu.edu.au Andreas Biermanns andreas.Biermanns@uni-siegen.de Lutz Geelhaar geelhaar@pdi-berlin.de Ullrich Pietsch pietsch@physik.uni-siegen.de ISSN 1556-276X Article type Nano Express Submission date 6 September 2011 Acceptance date 8 February 2012 Publication date 8 February 2012 Article URL http www.nanoscalereslett.com content 7 1 109 This peer-reviewed article was published immediately upon acceptance. It can be downloaded printed and distributed freely for any purposes see copyright notice below . Articles in Nanoscale Research Letters are listed in PubMed and archived at PubMed Central. For information about publishing your research in Nanoscale Research Letters go to http www.nanoscalereslett.com authors instructions For information about other SpringerOpen publications go to http www.springeropen.com 2012 Davydok etal. licensee Springer. This is an open access article distributed under the terms of the Creative Commons Attribution License http creativecommons.org licenses by 2.0 which permits unrestricted use distribution and reproduction in any medium provided the original work is properly cited. Lattice parameter accommodation between GaAs 111 nanowires and Si 111 substrate after growth via Au-assisted molecular beam epitaxy 1 2 1 2 Anton Davydok Steffen Breuer Andreas Biermanns Lutz Geelhaar and Ullrich Pietsch1 1Festkorperphysik Universitat Siegen Walter-Flex-Str. 3 Siegen 57072 Germany 2Paul-Drude-Institut fur Festkorperelektronik Hausvogteiplatz 5-7 Berlin 10117 Germany Corresponding author
