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Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Au Nanoparticles as Interfacial Layer for CdS Quantum Dot-sensitized Solar Cells | Nanoscale Res Lett 2010 5 1749-1754 DOI 10.1007 s11671-010-9705-z NANO EXPRESS Au Nanoparticles as Interfacial Layer for CdS Quantum Dot-sensitized Solar Cells Guang Zhu Fengfang Su Tian Lv Likun Pan Zhuo Sun Received 26 May 2010 Accepted 15 July 2010 Published online 28 July 2010 The Author s 2010. This article is published with open access at Springerlink.com Abstract Quantum dot-sensitized solar cells based on fluorine-doped tin oxide FTO Au TiO2 CdS photoanode and polysulfide electrolyte are fabricated. Au nanoparticles NPs as interfacial layer between FTO and TiO2 layer are dip-coated on FTO surface. The structure morphology and impedance of the photoanodes and the photovoltaic performance of the cells are investigated. A power conversion efficiency of 1.62 has been obtained for FTO Au TiO2 CdS cell which is about 88 higher than that for FTO TiO2 CdS cell 0.86 . The easier transport of excited electron and the suppression of charge recombination in the photoanode due to the introduction of Au NP layer should be responsible for the performance enhancement of the cell. Keywords Quantum dot-sensitized solar cell Gold nanoparticles Interfacial layer Introduction Quantum dot-sensitized solar cells QDSSCs are considered as a promising candidate for the development of next generation solar cells because they can be fabricated by simple and low-cost techniques 1 2 . The development of nanotechnogy especially the synthesis and application of nanomaterials 3-8 facilitates the progress of QDSSCs and enables them to receive more and more interests. Currently the efforts on improving the performance of G. Zhu F. Su T. Lv L. Pan Z. Sun Engineering Research Center for Nanophotonics Advanced Instrument Ministry of Education Department of Physics East China Normal University Shanghai China e-mail lkpan@phy.ecnu.edu.cn QDSSCs have mainly been focused on fundamental issues such as improved understanding of device physics 9 optimization of device structure by advanced processing
