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Point defects and grain boundary effects on tensile strength of 3C-SiC studied by molecular dynamics simulations

The tensile strength of irradiated 3C-SiC, SiC with artificial point defects, SiC with symmetric tilt grain boundaries (GBs), irradiated SiC with GBs are investigated using molecular dynamics simulations at 300 K. For an irradiated SiC sample, the tensile strength decreases with the increase of irradiation dose. The Young's modulus decreases with the increase of irradiation dose which agrees well with experiment and simulation data. | Point defects and grain boundary effects on tensile strength of 3C-SiC studied by molecular dynamics simulations