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This textbook deals with the analysis and design of analog CMOS integrated circuits, emphasizing recent technological developments and design paradigms that students and practicing engineers need to master to succeed in today's industry. Based on the author's teaching and research experience in the past ten years, the text follows three general principles: (1) Motivate the reader by describing the significance and application of each idea with real-world problems; (2) Force the reader to look at concepts from an intuitive point of view, preparing him/her for more complex problems; (3) Complement the intuition by rigorous analysis, confirming the results obtained by. | Design of Analog CMOS Integrated Circuits Behzad Razavi Professor of Electrical Engineering University of California Los Angeles Boston Burr Riđge IL Dubuque IA Madison Wl New York San Francisco st. Louis Bangkok Bogota Caracas Lisbon London Madrid Mexico City Milan New Delhi Seoul Singapore Sydney Taipei Toronto Design of Analog CMOS Integrated Circuits Behzad Razavi Errata in Problem Sets Chapter 2 In Eq. 2.44 must be in the numerator. Chapter 3 Call the third problem 3.2 . In Problem 3.2 Fig. 3.68 d change the gate voltage oW2 to EG In Problem 3.4 Fig. 3.71 a change the gate voltage of M 1 to EG. In Fig. 3.72 e Em must be changed to E . In Fig. 3.73 h the output is at the source of Af2. In Problem 3.10 c the question must be phrased as Which device enters the triode region first as Vout falls In Problem 3.13 first sentence should read . with W L 50 0.5. In Problem 3.16 a do not neglect channel-length modulation in the triode region. Chapter 4 In Problem 4.2 assume Iss 1 mA and change part a to Determine the voltage gain. In Problem 4.6 assume A 0. In Problem 4.9 assume A 7 0. In Problem 4.11 assume G5 20 ị A. In Problem 4.13 change the figure number to 4.8 a . Chapter 5 In Problem 5.16 d assume Vth does not vary with temperature. Chapter 6 In Problem 6.4 b and d assume A 0. Chapter 7 The second sentence of Problem 7.2 should read Assume W L 1 50 0.5 G1 ID2 0.1 mA . In Problem 7.20 change Gn and G 2 to 0.05 mA. In Problem 7.24 change the bias current to 0.1 mA. Chapter 8 In Problem 8.10 change the tolerable gain error to 5 . In Problem 8.15 Fig. 8.55 b call label the top Gm block Gm2. The output is at the output nodes of Gm2. Chapter 10 In Problem 10.11 change Iss to 0.25 mA and Ịy L 5 6 to 60 0.5. In Problem 10.12 add Maximize Egs14 Vgs15 while leaving at least 0.5 V across I1. Also in part b change M2 to AG. Problem 10.17 should read . between the gate and the drain of.w2 or AG. In Fig. 10.42 change the gate voltage of AG 4 to EG- In Problem 10.19 c change A0 .