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Tuyển tập các báo cáo nghiên cứu về hóa học được đăng trên tạp chí hóa hoc quốc tế đề tài : Transport and infrared photoresponse properties of InN nanorods/Si heterojunction | Kumar et al. Nanoscale Research Letters 2011 6 609 http www.nanoscalereslett.eom content 6 1 609 o Nanoscale Research Letters a SpringerOpen Journal NANO EXPRESS Open Access Transport and infrared photoresponse properties of InN nanorods Si heterojunction 1.2 1 1 1.2 2 Mahesh Kumar Thirumaleshwara N Bhat Mohana K Rajpalke Basanta Roul Ajit T Kalghatgi and S B Krupanidhi1 Abstract The present work explores the electrical transport and infrared IR photoresponse properties of InN nanorods NRs n-Si heterojunction grown by plasma-assisted molecular beam epitaxy. Single-crystalline wurtzite structure of InN NRs is verified by the X-ray diffraction and transmission electron microscopy. Raman measurements show that these wurtzite InN NRs have sharp peaks E2 high at 490.2 cm-1 and A LO at 591 cm-1. The current transport mechanism of the NRs is limited by three types of mechanisms depending on applied bias voltages. The electrical transport properties of the device were studied in the range of 80 to 450 K. The faster rise and decay time indicate that the InN NRs n-Si heterojunction is highly sensitive to IR light. Introduction Semiconducting group-III nitrides have attracted a lot of attention in recent years because of mainly the large band gap 0.7 to 6.2 eV that can be covered by the nitrides and their alloys. Their optical properties are highly suitable for novel optoelectronic and photonic applications. Compared to all other group-III nitrides InN possesses the lowest effective mass the highest mobility narrow band gap Eg of 0.7 to 0.9 eV and the highest saturation velocity 1 2 . These properties make it an attractive material for applications in solar cells and in terahertz emitters and detectors 3-5 . InN Si tandem cells have been proposed for high-efficiency solar cells 6 . InN nanostructures can also be used as sensor materials for various gases and liquids 7 . Good-quality InN layers are difficult to grow because of the low dissociation energy of InN and the lack of
