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Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Energy state InGaAs quantum dots on SiO2-patterned vicinal substrate | Nanoscale Research Letters SpringerOpen0 This Provisional PDF corresponds to the article as it appeared upon acceptance. Fully formatted PDF and full text HTML versions will be made available soon. Energy state InGaAs quantum dots on SiO2-patterned vicinal substrate Nanoscale Research Letters 2012 7 104 doi 10.1186 1556-276X-7-104 Hyo Jin Kim hjk@kopti.re.kr Junichi Motohisa Motohisa@rciqe.hokkaido.ac.jp Takashi Fukui fukui@rciqe.hokkaido.ac.jp ISSN 1556-276X Article type Nano Express Submission date 9 September 2011 Acceptance date 6 February 2012 Publication date 6 February 2012 Article URL http www.nanoscalereslett.com content 7 1 104 This peer-reviewed article was published immediately upon acceptance. It can be downloaded printed and distributed freely for any purposes see copyright notice below . Articles in Nanoscale Research Letters are listed in PubMed and archived at PubMed Central. For information about publishing your research in Nanoscale Research Letters go to http www.nanoscalereslett.com authors instructions For information about other SpringerOpen publications go to http www.springeropen.com 2012 Kim etal. licensee Springer. This is an open access article distributed under the terms of the Creative Commons Attribution License http creativecommons.org licenses by 2.0 which permits unrestricted use distribution and reproduction in any medium provided the original work is properly cited. 1 Energy state InGaAs quantum dots on SiO2-patterned vicinal substrate Hyo Jin Kim 1 Junichi Mothohisa2 and Takashi Fukui2 1Photonic Energy Research Center Korea Photonics Technology Institute Wolchul dong 971-35 Buk-gu Gwangju Korea 2Research Center for Integrated Quantum Electronics Hokkaido University North 13 West 8 Sapporo 060-8628 Japan Corresponding author hjk@kopti.re.kr Email addresses HJK hjk@kopti.re.kr JM motohisa@REMOVEME.rciqe.hokudai.ac.jp TF fukui @ REMOVME.rciqe .hokudai .ac.jp Abstract The optical properties of In0.8Ga0.2As self-assembled quantum .
