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Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy | Nanoscale Res Lett 2010 5 1340-1343 DOI 10.1007 s11671-010-9650-x NANO EXPRESS Measurement of w-InN h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy J. M. Liu X. L. Liu X. Q. Xu J. Wang C. M. Li H. Y. Wei S. Y.Yang Q. S. Zhu Y. M. Fan X. W. Zhang Z. G. Wang Received 24 March 2010 Accepted 17 May 2010 Published online 1 June 2010 The Author s 2010. This article is published with open access at Springerlink.com Abstract X-ray photoelectron spectroscopy has been used to measure the valence band offset VBO of the w-InN h-BN heterojunction. We find that it is a type-II heterojunction with the VBO being -0.30 0.09 eV and the corresponding conduction band offset CBO being 4.99 0.09 eV. The accurate determination of VBO and CBO is important for designing the w-InN h-BN-based electronic devices. Keywords Valence band offset w-InN h-BN heterojunction X-ray photoelectron spectroscopy Conduction band offset Valence band offset Introduction Among the group-III nitrides wurtzite InN w-InN is a very promising semiconductor material of application in high-frequency high-speed high-power heterojunction fieldeffect transistors HFETs 1-4 due to its superior electron transport properties small effective mass and high mobility. W-InN also has been used in field emitter because of its negative affinity NET 5-7 . Hexagonal boron nitride h-BN is a sp2-bonded layered compound isostructural to graphite. Due to its wide band gap it has been used in J. M. Liu X. L. Liu X. Q. Xu J. Wang C. M. Li H. Y. Wei S. Y. Yang Q. S. Zhu Y. M. Fan X. W. Zhang Z. G. Wang Key Laboratory of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences P. O. Box 912 100083 Beijing People s Republic of China e-mail liujianming@semi.ac.cn X. L. Liu e-mail xlliu@semi.ac.cn microelectronic devices. There were several reports on field emission characteristics of h-BN films 8-10 . Chinaru and his co-workers 11 designed an h-BN GaN field emission device which appeared .
