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Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy | Shi et al. Nanoscale Res Lett 2011 6 50 http www.nanoscalereslett.eom content 6 1 50 o Nanoscale Research Letters a SpringerOpen Journal NANO EXPRESS Open Access Determination of InN Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy 1 2 11 111 1 1 1 mw w 1 K Shi ƯD LI nr song Y Guo J Wang XQ XU JM Liu AL Yang HY Wei B Zhang SY Yang XL Liu QS Zhu1 ZG Wang1 Abstract Diamond is not only a free standing highly transparent window but also a promising carrier confinement layer for InN based devices yet little is known of the band offsets in InN diamond system. X-ray photoelectron spectroscopy was used to measure the energy discontinuity in the valence band offset VBO of InN diamond heterostructure. The value of VBO was determined to be 0.39 0.08 eV and a type-I heterojunction with a conduction band offset CBO of 4.42 0.08 eV was obtained. The accurate determination of VBO and CBO is important for the application of III-N alloys based electronic devices. Introduction Among the group III nitrides InN is of great interest because of its extremely high predicted electron mobility 1 small effective mass 2 3 and large electron saturation drift velocity 4 . With the latest progress in improving the film quality these years InN film has been considered to be able to meet the requirements for application to practical devices 5 6 . It is expected to be a highly promising material for the fabrication of high performance high electron mobility transistor HEMT due to its electronic properties. Moreover the re-evaluation of the InN bandgap and subsequent findings 7 8 have opened up interesting opportunities for using InN in new applications such as high-efficiency solar cells 9 solid state lighting 10-12 and 1.55 pm emission for fiber optics 13 14 . As the hardest material with high optical transparency from ultraviolet to infrared range diamond is an excellent transparent window for InN based photoelectric devices mentioned above. It can also be used as lens .
