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Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Size Evolution of Ordered SiGe Islands Grown by Surface Thermal Diffusion on Pit-Patterned Si(100) Surface | Nanoscale Res Lett 2010 5 1921-1925 DOI 10.1007 s11671-010-9781-0 SPECIAL ISSUE ARTICLE Size Evolution of Ordered SiGe Islands Grown by Surface Thermal Diffusion on Pit-Patterned Si 100 Surface Giovanni Maria Vanacore Maurizio Zani Monica Bollani Davide Colombo Giovanni Isella Johann Osmond Roman Sordan Alberto Tagliaferri Received 2 July 2010 Accepted 9 September 2010 Published online 30 September 2010 The Author s 2010. This article is published with open access at Springerlink.com Abstract The ordered growth of self-assembled SiGe islands by surface thermal diffusion in ultra high vacuum from a lithographically etched Ge stripe on pit-patterned Si 100 surface has been experimentally investigated. The total surface coverage of Ge strongly depends on the distance from the source stripe as quantitatively verified by Scanning Auger Microscopy. The size distribution of the islands as a function of the Ge coverage has been studied by coupling atomic force microscopy scans with Auger spectro-microscopy data. Our observations are consistent with a physical scenario where island positioning is essentially driven by energetic factors which predominate with respect to the local kinetics of diffusion and the growth evolution mainly depends on the local density of Ge atoms. Keywords SiGe islands Ordering Pit-patterned Si surface Nucleation Diffusion Growth dynamics G. M. Vanacore M. Zani A. Tagliaferri CNISM and Dipartimento di Fisica Politecnico di Milano Piazza Leonardo da Vinci 32 20133 Milano Italy e-mail giovanni.vanacore@mail.polimi.it M. Bollani CNR-Istituto di Fotonica e Nanotecnologie via Anzani 42 22100 Como Italy D. Colombo G. Isella J. Osmond R. Sordan CNISM and LNESS Dipartimento di Fisica Politecnico di Milano Polo Regionale di Como Via Anzani 42 22100 Como Italy J. Osmond Institute of Photonics Sciences 08860 Barcelona Spain Introduction Stranski-Krastanov SK growth of SiGe islands on Si 100 substrates has become a model system for nucleation 1 faceting 2 3 .
