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In this work, the Raman and IR active vibrational modes of GaN structure were calculated using correlation method. All the experimental Raman peaks were assigned in the Raman spectra of GaN/AlxGa1-xN/AlN/Si structures, which were prepared using metalorganic chemical vapor deposition (MOCVD) technique. The effect of AlxGa1-xN buffer layer with various of x values (0.011; 0.02; 0.037; 0.053; 0.49; 1) on the structure properties of GaN was studied by mean of Raman spectroscopy. The stabilization of the position and the change of full width at half maximum (FWHM) of E2 mode in the Raman spectra of GaN/AlxGa1-xN/AlN/Si structures confirmed the high crystalline quality of the GaN layer. | Raman spectroscopy of GaN AlxGa1-xN AlN Si structures
