Đang chuẩn bị nút TẢI XUỐNG, xin hãy chờ
Tải xuống
Thermoelectrics (TE) is well-known as a non-smoke technology for electricity production from waste heat and for greenhouse effect reduction. Enhancing power factor (PF = S 2 , where S is Seebeck coefficient and is electrical conductivity) and figure of merit of TE materials to achieve high-performance TE devices has attracted much scientific attention. Doping foreign elements into host bulk structure is a basic and traditional solution to modify the thermoelectric properties of materials. In this work, we use small amount of 0.5 at.% In as dopant which is incorporated into Ga-doped ZnO (GZO) bulk by using solid-state reaction method. The effects of In addition on electrical and thermoelectric characteristics of the GZO bulk are discussed in detail. | Effect of 0.5 at.% indium addition on thermoelectric properties of gallium doped-zinc oxide bulk
