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In this study, gallium and hydrogen co-doped ZnO (HGZO) thin films were investigated. The films were deposited by sputtering from Ga-doped ZnO (GZO) ceramic target in hydrogen and argon plasma. The as-deposited HGZO films possess enhanced electron mobility of 48.6 cm2 /Vs as compared to that of 39.4 cm2 /Vs of GZO films, sputtered from the same target. Because of insignificant variation in crystallinity, this improvement is attributed to roles of hydrogen in crystalline lattice structure of the films. | X-ray photoelectron spectroscopic study on high-electron-mobility gallium and hydrogen co-doped zinc oxide thin films
