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Lecture Microelectronic devices and circuits - Lecture 4: PN Junction and MOS Electrostatics(I)

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Lecture 4 - PN Junction and MOS Electrostatics(I): Semiconductor Electrostatics in Thermal Equilibrium. The following will be discussed in this chapter: Nonuniformly doped semiconductor in thermal equilibrium; relationships between potential, φ(x) and equilibrium carrier concentrations, po(x), no(x)–Boltzmann relations & “60 mV Rule”; quasineutral situation. | Lecture Microelectronic devices and circuits - Lecture 4: PN Junction and MOS Electrostatics(I)

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