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The Hall effect is studied theoretically in a doped semiconductor superlattice (DSSL) subjected to a crossed dc electric field and magnetic field in the presence of an intense electromagnetic wave (EMW). By using the quantum kinetic equation for electrons interacting with acoustic phonons at low temperature, we obtain expressions for the magnetoresistance as well as the Hall coefficient in dependence on the external fields and characteristic parameters of the DSSL. Analytical results are numerically evaluated for the GaAs:Si/GaAs:Be DSSL. | Communications in Physics, Vol. 24, No. 3S1 (2014), pp. 45-50 DOI:10.15625/0868-3166/24/3S1/5135 HALL EFFECT IN THE DOPED SEMICONDUCTOR SUPERLATTICE WITH AN IN-PLANE MAGNETIC FIELD UNDER INFLUENCE OF AN INTENSE ELECTROMAGNETIC WAVE NGUYEN QUANG BAU Faculty of Physics, Hanoi University of Science, Vietnam National University, Hanoi, Vietnam BUI DINH HOI Department of Physics, National University of Civil Engineering, Hanoi, Vietnam TRAN CONG PHONG Center for Theoretical and Computational Physics, Hue University’s College of Education, Hue city, Vietnam E-mail: hoibd@nuce.edu.vn Received 04 April 2014 Accepted for publication 24 August 2014 Abstract. The Hall effect is studied theoretically in a doped semiconductor superlattice (DSSL) subjected to a crossed dc electric field and magnetic field in the presence of an intense electromagnetic wave (EMW). By using the quantum kinetic equation for electrons interacting with acoustic phonons at low temperature, we obtain expressions for the magnetoresistance as well as the Hall coefficient in dependence on the external fields and characteristic parameters of the DSSL. Analytical results are numerically evaluated for the GaAs:Si/GaAs:Be DSSL. The dependence of the magnetoresistance on the magnetic field is consistent with the result obtained for some two-dimensional electron systems. The Hall coefficient depends weakly on the magnetic field and its value in the presence of the EMW is smaller than that of the case without EMW. Keywords: Hall effect, magnetoresistance, electron-phonon interaction, doping superlattice. I. INTRODUCTION A doped semiconductor superlattice (DSSL) is formed by layers of n-type and p-type semiconductors arranged alternatively between an intrinsic semiconductor (so called n-i-p-i superlattice). The most important advantage of DSSLs is the possibility of adjustment of their parameters to get long lifetimes, high carrier mobility. The electrical and optical properties of the DSSL structure may be .
