TAILIEUCHUNG - Electronic Properties of Doped Semiconductors

Electrical resistivity (also known as resistivity, specific electrical resistance, or volume resistivity) quantifies how strongly a given material opposes the flow of electric current. A low resistivity indicates a material that readily allows the movement of electric charge. Resistivity is commonly represented by the Greek letter ρ (rho). The SI unit of electrical resistivity is the ohm⋅metre (Ω⋅m)[1][2][3] although other units like ohm⋅centimetre (Ω⋅cm) are also in use. As an example, if a 1m×1m×1m solid cube of material has sheet contacts on two opposite faces, and the resistance between these contacts is 1Ω, then the resistivity of the material is. | s _ . Springer Series in Solid-State Sciences 45 ft . Shklovskii . Efros . . . I Electronic Properties I of Doped I Semiconductors Ẽ His - . Ị . . K . i . ii s iỄìll il ill I y Ki Si Ki Ễli .il iill Ị Springery-Verlag s Berlin Heidelberg NewYork Tokyo Shklovskii . Efros Electronic Properties of Doped Semiconductors With 106 Figures Springer-Verlag Berlin Heidelberg New York Tokyo 1984 Professor Dr. Boris L Shklovskii Professor Dr. Alex L. Efros . IOFFE Physico-Technicai Institute Academy of Sciences of the USSR. Politekhnicheskaja Leningrad 194021 USSR Tran slater Dr. Serge Luryi Bell Laboratories 600 Mountain Avenue Murray Hill NJ 07974 USA Series Editors Professor Dr. Manuel Cardona Professor Dr. Peter Fulde Professor Dr. Hans-Joachim Queisser Max-Planck-Institut fur Festkorperforschung Heisenbergstrasse 1 D-7000 Stuttgart 80 Fed. Rep. of Germany Title of the original Russian edition Elektronniye svoistva tegirovannykh pohiprovodnikov by Nauka Publishing House Moscow 1979 ISBN 3-540-12995-2 Springer-Verlag Berlin Heidelberg New York Tokyo ISBN 0-387-12995-2 Springer-Verlag New York Heidelberg Berlin Tokyo Library of Congress Cataloging in Publication Data. Shklovskii B. I. Boris Ionovich 1944-. Electronic properties of doped semiconductors. Springer series in solid-state sciences 45 . Translation of Eleklronnye svoistva 1 egirovannykh poluprovodnikov. Includes bibliographical references and index. 1. Doped semiconductors. 2. Electron-electron interactions. 3. Hopping conduction. 4. Materials at low temperatures. I. Efros . Alex L. 1938-. II. Title. III. Series. 1984 22 84-5420 This work is subject to copyright. All rights are reserved whether the whole or part of the material is concerned specifically those of translation reprinting reuse of illustrations broadcasting reproduction by photocopying machine or similar means and storage in data banks. Under 54 of the German Copyright Law where copies are made for other than .

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