TAILIEUCHUNG - MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 11

Tham khảo tài liệu 'mosfet modeling for vlsi simulation - theory and practice episode 11', kỹ thuật - công nghệ, cơ khí - chế tạo máy phục vụ nhu cầu học tập, nghiên cứu và làm việc hiệu quả | 376 8 Modeling Hot-Carrier Effects Fig. Electron injection in gate oxide showing lucky electron model electron arrives at location D it will be swept toward the gate electrode by the aiding field. Since the processes are statistically independent the resultant probability is the product of the probability for each individual event . 23 L dy Ig h P1P2P3 Jo A- where Ảr is the redirectional scattering mean free path. The factor dy Ằ can be interpreted as the probability of redirection over dy. Pị is the probability for acquiring sufficient kinetic energy and normal momentum P2 is the probability that a hot electron travels to the Si-SiO2 interface without suffering any inelastic collision and P3 is the probability to suffer no collision in the oxide image-potential well. Thus to calculate Ig we need to calculate the three probabilities P1 P2 and P3. The essential processes involved for modeling channel hot-electron injection into the gate oxide is illustrated in Figure . In order for the hot electron to surmount the Si-SiO2 potential barrier I b its kinetic energy must be greater than q i b. To acquire kinetic energy q bb the hot electron will have to travel a distance d bb assuming the electric field s along the channel to be constant. The probability of a channel electron to travel a distance d or more without suffering collision can be written as where Ả is the scattering mean free path of the hot electron 25 . Hence we can write e 9blgx as the probability that an electron will acquire a kinetic energy greater than the potential barrier b. Now if the electron is to move into the oxide its momentum must be redirected towards the Si-SiO2 interface by elastic scattering so as to have sufficiently large momentum component perpendicular to the interface. It has been shown that the probability of an electron acquiring the required kinetic energy and retaining the appropriate momentum after redirection is 23 Sk __ Pi exp . Gate Current .

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