TAILIEUCHUNG - Nitrogen doped ZnOfilm grown by the plasma-assisted metal-organic chemical vapor deposition

Rigorously speaking the functional group is not the whole molecule but only that collection of atoms that provides a specific chemical function. For example, the chemical family of alcohols is characterized by the function of the hydroxyl (OH) group, and aldehydes, ketones are characterized by carbonyl groups (C=O). There are various combinations of hydroxyl groups in molecules along with carbonyl groups and these combinations can lead to hydroxyketones and aldehydes (the basis for sugars) as well as to carboxylic acids. Indeed, esters, and amides also have carbonyl groups (C=O) but differ in their combination with an additional structural feature. To understand the. | JOURNAL OfCRYSTAL GROWTH ELSEVIER Journal of Crystal Growth 226 2001 123-129 locate jcrysgro Nitrogen doped ZnO film grown by the plasma-assisted metal-organic chemical vapor deposition Xinqiang gd hwai Dang Jinhong Wanga Mingtao Lia XiumngJianga GuCong Du XiangLiu . Department of Electronic Engineering State Key Lab on Integrated Optoelectronics Jilin University Changchun 130023 h . t PeopYRepMicofCh M WMn ls ResearchRenter NorthwesternUnivnrsity Evanstnn II USA y . _ . . . Received 28 December 2000 accepted 5 March 2001 CommanicatedbyM. Schieber Abstract Nitrogen doped and non-doped ZnO films a nDDOhnnbRthe plasma-assgsted metal-organic chemical vapor deposition MOCVD on sapphire. X-ray diffraction spectra show that they are both strongly ooriented while the N-doped sample is_ f better crystal quality A Strong emission coming from A-exciton is observed at 10 and 77 K photoluminescence PL spectra in both samples while deep level transition is hardly observed. More emission peaks are found in the PL spNnnn nf nhg aMoped--ample rtrhatriD tOgthnt of a eoagdogeD oaei RamDR acangyaing ia aiso perfgnmed in back SMUecingconfiNUgaanon. Egmode a odneevad ia boto gamples wgtloA1 eo moee can only Ja fouad intdg NtNsped sampk gahidh in icatns ghat highnnatity oOrhd N-dopedZnO fitauA hightRgndivnZnOhlmfe obtadienlbD nttrondd Poping- dg noni duaiiaZsU by ElsdvierVctence BtVn BU dll. Dopin Aa. lt í DiksRỉga igsndnOil1 íipn - . nhgga gnnDgmít ag t lr Introd Action ZnO a wide gap semiconductor with band-gap of eV at room temperature is attracting more attentionbeconse of its good optical electrical and piezo-electrical properties. It has potential uses in oph t a cttooná dl avsigzn na-li os light amitnav diodes SLEDs 1D t DU Sag t Rre pg ad cb nZo it nyschnne dddices onsgisy noi oVIs Recadtiy opn-vn tbnatr tdỊtncM Iì. UVliesmg ng Zirht film dg molei n hl x-eet aDmixg lBK and DSllshn a Carresponairigaiitgoi- Ted N86-43Si 922SeSt .

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