TAILIEUCHUNG - Crystalline Silicon Properties and Uses Part 12

Tham khảo tài liệu 'crystalline silicon properties and uses part 12', kỹ thuật - công nghệ, cơ khí - chế tạo máy phục vụ nhu cầu học tập, nghiên cứu và làm việc hiệu quả | 264 Crystalline Silicon - Properties and Uses When a new semiconductor material is proposed to build electronic devices research on the M - S interface must be done. For nanocrystalline porous silicon the panorama is not as clear as that for crystalline silicon. The electrical characterization of M - S with different metal layers must be done. If the Schottky barrier is equal or close to zero an ohmic contact is expected. The current can flow inside or outside the device with minimum opposition and the relationship between electrical potential V and current I is governed by Ohm s law Salinas et al. 2006 Sze 1990 the contact is considered ohmic. If the barrier height is not close to zero a rectifying contact can be expected. An ohmic contact affects the electrical performance of the device with a minimum or insignificant impact. There is a condition of minimum resistance across the contact and therefore free charge carriers can flow in or out of the device. However rectifying contacts play an important role in different applications. In addition to these two types of contacts a third type of contact could be formed if the semiconductor is heavily doped. In this special case the Schottky barrier is sufficiently thin to let carries tunnel across it instead of jumping to overcome the barrier. There are many considerations to keep in mind during the analysis of M-S behavior. One consideration for example is the interfacial states which are present at the mechanical junction of the contact such as unbonding atoms a rough surface and mechanical damage during the metal deposition. For an ideal M - S contact interfacial states are not taken into account. If this assumption works no deep analysis is needed. Otherwise a different characterization technique must be used to find the electrical behavior of the interfacial states Rhoderick Williams 1998 . For ideal conditions Schottky theory explains the interface behavior and establishes the method to estimate the barrier height

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