TAILIEUCHUNG - The MEMS Handbook (1st Ed) - M. Gad el Hak Part 9

Tham khảo tài liệu 'the mems handbook (1st ed) - m. gad el hak part 9', kỹ thuật - công nghệ, cơ khí - chế tạo máy phục vụ nhu cầu học tập, nghiên cứu và làm việc hiệu quả | plate snaps back to its original shape. If the size of the polysilicon step is Ax the velocity of the polysilicon microstructure is given by v Ax f where f is the frequency of the pulse. The size of the step itself is given by h2 Ax 2 -7 where I stands for the length of the plate touching the insulator film. Figure illustrates the sequence of a stepping slider fabrication process. A layer of silicon nitride is deposited at 900 C by the reaction of SiH4 and NH3 in N2. Next in situ phosphorus-doped polysilicon is deposited and patterned in a SF6 plasma to form the sliding rail for the power supply of the slider A mask 1 . Thick sacrificial SiO2 is deposited at 610 C by CVD of SiH4 and O2 in N2. The thickness of the oxide 1 pm determines the future bushing height. The oxide is patterned with a second mask exposing the silicon nitride in the area of the bushing. Fifty nm of CVD PSG is then deposited over the whole wafer at 610 C from the thermal reaction of SiH4 PH3 and O2 in N2 B . In step C FIGURE Process sequence for the fabrication of polysilicon stepper slider. After Akiyama T. J. Microelec-tromech. Syst. 2 106-110 1993. With permission. 2002 by CRC Press LLC plate snaps back to its original shape. If the size of the polysilicon step is Ax the velocity of the polysilicon microstructure is given by v Ax f where f is the frequency of the pulse. The size of the step itself is given by h2 Ax 2 -7 where I stands for the length of the plate touching the insulator film. Figure illustrates the sequence of a stepping slider fabrication process. A layer of silicon nitride is deposited at 900 C by the reaction of SiH4 and NH3 in N2. Next in situ phosphorus-doped polysilicon is deposited and patterned in a SF6 plasma to form the sliding rail for the power supply of the slider A mask 1 . Thick sacrificial SiO2 is deposited at 610 C by CVD of SiH4 and O2 in N2. The thickness of the oxide 1 pm determines the .

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