TAILIEUCHUNG - Optoelectronics Materials and Techniques Part 5

Tham khảo tài liệu 'optoelectronics materials and techniques part 5', kỹ thuật - công nghệ, cơ khí - chế tạo máy phục vụ nhu cầu học tập, nghiên cứu và làm việc hiệu quả | 110 Optoelectronics - Materials and Techniques 4. Defects in GaN films and formation mechanisms Threading dislocation D. Kapolnek Kapolnek et al. 1995 proposed that in GaN films grown by metalorganic chemical vapor deposition on sapphire the source for dislocation is the nucleation layer itself. During island coalescence edge threading dislocation segments may be generated when misfit edge dislocations between adjacent island are spatially out of phase. The generation of screw dislocations appears to be more complex they found out that pure screw or mixed threading dislocations do decrease with the film thickness due to the ease of cross slip of screw dislocations. Kyoyeol Lee Lee Auh 2001 studied the dislocation density of GaN on sapphire grown by hydride vapor phase epitaxy. They found that the reduction of threading dislocation sites occurred with increasing GaN films thickness. Similarly F. R. Chien Chien et al. 1996 also investigated growth defects in GaN films grown by metalorganic chemical vapor deposition on 6H-SiC substrate and reported that dislocation density decreases rapidly with the increase of GaN film thickness from the interface. The predominant defects in GaN films grown on 6H-SiC with aluminium nitride AlN buffer layer are edge type threading dislocations along 0001 growth direction with Burgers vector 1 3 121 0 . The reduction in dislocation density is due to the formation of half-loops. Besides this dislocation reaction also plays a role for example two dislocations interact and merge to produce one dislocation according to the reaction 13 121 0001 13 1213 2 These dislocations originated at AlN SiC interface to accommodate the misorientation of neighboring domains formed from initial island nuclei which are twisted and tilted with respect to the substrate surface. Stacking faults There have been reported that stacking faults formed in GaN layers grown on polar and non-polar substrates are different. For the growth in polar direction .

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