TAILIEUCHUNG - Metal Organic Chemical Vapor Deposition: Technology and Equipment

There are, actually, no formal Swedish regulations for organic contaminants in sludge. There is an informal agreement between the Swedish EPA, the Farmers Union and the Water and Wastewater Association which includes the recommendations in table . These agreements are based more on practical experience than on scientific data. Sweden also used to have a recommended limit value for toluene, but this has been omitted (WALLGREN 2001). The US regulation on the use of sewage sludge in agriculture does not establish numerical pollutant limits of any organic pollutants, because at least one of the following criteria applied for the. | 4 Metal Organic Chemical Vapor Deposition Technology and Equipment John L. Zilko INTRODUCTION The growth of thin layers of compound semiconducting materials by the co-pyrolysis of various combinations of organometallic compounds and hydrides known generically as metal-organic chemical vapor deposition MOCVD has assumed a great deal of technological importance in the fabrication of a number of opto-electronic and high speed electronic devices. The initial demonstration of compound semiconductor film growth was first reported in 1968 and was initially directed toward becoming a compound semiconductor equivalent of Silicon on Sapphire growth technology. 1 2 Since then both commercial and scientific interest has been largely directed toward epitaxial growth on semiconductor rather than insulator substrates. State of the art performance has been demonstrated for a number of categories of devices including lasers 3 PIN photodetectors 4 solar cells 5 phototransistors 6 photocathodes 7 field effect transistors 8 and modulation doped field effect transistors. 9 The efficient operation ofthese devices requires the grown films to have a number of excellent materials properties including purity high luminescence efficiency and or abrupt interfaces. In 151 152 Thin-Film Deposition Processes and Technologies addition this technique has been used to deposit virtually all III-V and IIVI semiconducting compounds and alloys in support of materials studies. The III-V materials that are lattice matched to GaAs . AlGaAs InGaAlP and InP . InGaAsP have been the most extensively studied due to their technological importance for lasers light emitting diodes and photodetectors in the visible and infrared wavelengths. The II-VI materials HgCdTe 10 and ZnSSe 11 12 have also been studied for far-infrared detectors and blue visible emitters respectively. Finally improved equipment and process understanding over the past several years has led to demonstrations of excellent materials .

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