TAILIEUCHUNG - Báo cáo hóa học: " Synthesis and Photoluminescence Property of Silicon Carbide Nanowires Via Carbothermic Reduction of Silica"

Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Synthesis and Photoluminescence Property of Silicon Carbide Nanowires Via Carbothermic Reduction of Silica | Nanoscale Res Lett 2010 5 252-256 DOI s11671-009-9474-8 NANO EXPRESS Synthesis and Photoluminescence Property of Silicon Carbide Nanowires Via Carbothermic Reduction of Silica Xiaogang Luo Wenhui Ma Yang Zhou Dachun Liu Bin Yang Yongnian Dai Received 15 May 2009 Accepted 26 October 2009 Published online 11 November 2009 to the authors 2009 Abstract Silicon carbide nanowires have been synthesized at 1400 C by carbothermic reduction of silica with bamboo carbon under normal atmosphere pressure without metallic catalyst. X-ray diffraction scanning electron microscopy energy-dispersive spectroscopy transmission electron microscopy and Fourier transformed infrared spectroscopy were used to characterize the silicon carbide nanowires. The results show that the silicon carbide nanowires have a core-shell structure and grow along 111 direction. The diameter of silicon carbide nanowires is about 50-200 nm and the length from tens to hundreds of micrometers. The vapor-solid mechanism is proposed to elucidate the growth process. The photoluminescence of the synthesized silicon carbide nanowires shows significant blueshifts which is resulted from the existence of oxygen defects in amorphous layer and the special rough core-shell interface. Keywords Silicon carbide nanowires Carbothermic reduction Bamboo carbon Photoluminescence property Growth mechanism X. Luo W. Ma Y. Zhou D. Liu B. Yang Y. Dai Faculty of Metallurgical and Energy Engineering Kunming University of Science and Technology 650093 Kunming People s Republic of China X. Luo W. Ma Y. Zhou D. Liu B. Yang Y. Dai National Engineering Laboratory for Vacuum Metallurgy Kunming University of Science and Technology 650093 Kunming People s Republic of China e-mail mwhsilicon@ Introduction Recently the preparation of one-dimensional nanowires has received considerable attention due to their excellent properties and widely potential applications. The nanowires such as silicon Si zinc oxide ZnO gallium nitride GaN

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