TAILIEUCHUNG - Advances in Optical and Photonic Devices 2011 Part 12

Tham khảo tài liệu 'advances in optical and photonic devices 2011 part 12', kỹ thuật - công nghệ, cơ khí - chế tạo máy phục vụ nhu cầu học tập, nghiên cứu và làm việc hiệu quả | 264 Advances in Optical and Photonic Devices At 4V above breakdown the peak of photon detection probability is 43 and occurs at 500 nm wavelength of light. At 2 V above breakdown the peak of photon detection probability shifts to a slightly lower wavelength and has a peak value of 21 . On the Fig. 11. is presented also the curve of modeled photon detection probability. Model is using the absorption coefficient of silicon and the probability that a photon will be absorbed in the depletion region together with a model of the transmittance of the anti-reflection coating. The depletion layer absorption and anti-reflection coating determine the spectral profile of the photon detection efficiency which is then scaled to fit to the experimental photon detection probability data by using the avalanche breakdown probability as a fitting parameter. Scaling the micro-cell photon detection probability values with the silicon photomultiplier fill factor gives the photon detection efficiency of silicon photomultiplier. For modern technology the filling factor rich value of . Multiplication factor Multiplication factor of silicon photomultiplier is defined by the avalanche process and the characteristic of quenching element. The value of multiplication factor could be precisely calculated from single photon spectra as mentioned before the signal is represented the charge generated by the avalanche breakdown process and peaks correspondent to the number of detected photons or photoelectrons. In silicon photomultiplier is possible to get the absolute calibration of the multiplication factor using the position of the single photon peak in the spectra correspondent value in charge because this position is exactly correspondent of creating of one electron-hole pair in micro-cell. The multiplication factor is a function of detector bias and temperature. Fig. 12 shows the multiplication factor of silicon photomultiplier increases linearly with over breakdown voltage and is .

TÀI LIỆU LIÊN QUAN
69    272    11
TỪ KHÓA LIÊN QUAN
Đã phát hiện trình chặn quảng cáo AdBlock
Trang web này phụ thuộc vào doanh thu từ số lần hiển thị quảng cáo để tồn tại. Vui lòng tắt trình chặn quảng cáo của bạn hoặc tạm dừng tính năng chặn quảng cáo cho trang web này.