TAILIEUCHUNG - Advances in optical and photonic devices Part 8

Tham khảo tài liệu 'advances in optical and photonic devices part 8', kỹ thuật - công nghệ, cơ khí - chế tạo máy phục vụ nhu cầu học tập, nghiên cứu và làm việc hiệu quả | Single Mode Operation of Waveguide Optical Isolators Based on the Nonreciprocal-loSs Phenomenon 129 To take the first step we made a device with a MnAs layer because the epitaxial growth technology of MnAs layers on III-V semiconductors was well established 31-33 . To reduce the propagation loss of light and obtain a single-mode operation we used the ridge waveguide structure with a large lateral-confinement factor see Fig. 5 b . In the following sections we provide details of the fabrication process and operation characteristics of the device that uses ferromagnetic MnAs. Constructing the device Figure 10 a is a cross-sectional diagram of our TM-mode waveguide isolator with a ferromagnetic MnAs layer. The MnAs layer covers the SOA surface and two interface layers a highly doped p-type InGaAs contact layer and a p-type InP cladding layer are inserted between the two. The InGaAs contact layer has to be thin so that light traveling in the SOA will extend into the MnAs layer the absorption edge of the contact layer is about 1550 nm . An Au Ti double metal layer covers the MnAs layer forming an electrode for current injection into the SOA. Light passes through the SOA waveguide in a direction perpendicular to the figure z direction . An Al2O3 insulating layer separates the SO A surface from the Au-Ti electrode except on the contact region. Incident light passes through the SOA waveguide perpendicular to the figure z direction . Fig. 10. a Schematic cross section of our waveguide isolator for TM mode consisting of a ridge-shaped optical amplifying waveguide covered with a MnAs layer magnetized in x-direction. Light propagates along z-direction. b SEM cross section of device. On the basis of the simulation results mentioned in Section we fabricated a device as follows. The substrate was a highly doped 100 -oriented n-type wafer of InP. The SOA was formed on the substrate by metalorganic vapor-phase epitaxy MOVPE . The MQW showed a .

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