TAILIEUCHUNG - Báo cáo hóa học: " Deep-level Transient Spectroscopy of GaAs/AlGaAs Multi-Quantum Wells Grown on (100) and (311)B GaAs "

Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Deep-level Transient Spectroscopy of GaAs/AlGaAs Multi-Quantum Wells Grown on (100) and (311)B GaAs | Nanoscale Res Lett 2010 5 1948-1951 DOI s11671-010-9820-x SPECIAL ISSUE ARTICLE Deep-level Transient Spectroscopy of GaAs AlGaAs Multi-Quantum Wells Grown on 100 and 311 B GaAs Substrates M. Shafi R. H. Mari A. Khatab D. Taylor M. Henini Received 29 July 2010 Accepted 19 October 2010 Published online 16 November 2010 The Author s 2010. This article is published with open access at Abstract Si-doped GaAs AlGaAs multi-quantum wells structures grown by molecular beam epitaxy on 100 and 311 B GaAs substrates have been studied by using conventional deep-level transient spectroscopy DLTS and high-resolution Laplace DLTS techniques. One dominant electron-emitting level is observed in the quantum wells structure grown on 100 plane whose activation energy varies from to eV as junction electric field varies from zero field edge of the depletion region to X 106 V m. Two defect states with activation energies of and eV are detected in the structures grown on 311 B plane. The eV trap shows that its capture cross-section is strongly temperature dependent whilst the other two traps show no such dependence. The value of the capture barrier energy of the trap at eV is eV. Keywords Laplace DLTS Multi-quantum wells DX centre Heterostructures Introduction During last few decades heterostructure-based devices have contributed to the advancement of diode lasers highspeed electrical devices 1 and THz detectors 2 . Electrically and optically active defect states in the bandgap of semiconductor materials can play an important role in their carrier transport properties. Previous DLTS studies of defects in GaAs AlAs GaAs quantum wells 3 showed that M. Shafi R. H. Mari A. Khatab D. Taylor M. Henini School of Physics and Astronomy Nottingham Nanotechnology Nanoscience Centre University of Nottingham Nottingham NG7 2RD UK e-mail at least six out of eight sub-bands in the heterostructures are .

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